Abstract
Luminescence at 1.491 eV was detected at liquid-helium temperatures from CdTe epilayers heavily doped with iodine. The relatively sharp emission band (FWHM=4.4 meV) was observed under both above-band-gap and below-band-gap excitation. The intensity of the 1.491 eV emission was highly dependent on sample temperature and could only be detected below 45 K. Using the tunable output from a titanium:sapphire laser, selective excitation of this emission was performed to identify the recombination center. A localized mode of 36.5 meV, much larger than the 21.3 meV bulk CdTe mode, is associated with the defect center. We identify the defect as an associate donor-acceptor pair complex resulting from nearest neighbor cation (NaCd) and anion (ITe) point defects. The energy level associated with the (Na−Cd-I+Te) neutral associate pair is approximately 0.115 eV below the CdTe conduction band.
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