Abstract
We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.
Highlights
Selective etching of fs-laser inscribed structures has become a huge research field
We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels
We systematically investigated the fslaser structuring process using a 10 MHz-pulse repetition rate laser system
Summary
Selective etching of fs-laser inscribed structures has become a huge research field. Three-dimensional hollow micro- and sub-microstructures with aspect ratios of length to diameter in excess of 8000 [1] find applications in e.g. micro- and optofluidics, microsensors, photonics, and integrated lab-on-a-chip applications [2]. The fs-laser writing velocity can be a limiting factor [9] considering that lots of samples could be etched at the same time, while writing one single track requires one writing laser beam for each track and complex structures consist of a huge amount of written tracks. For this reason, we systematically investigated the fslaser structuring process using a 10 MHz-pulse repetition rate laser system. A low roughness is crucial for photonic applications such as etched waveguide structures [1,10], gratings and lenses or resonators, what is known from waveguides fabricated using lithography [11]
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