Abstract
Selective liquid-phase (LPE) epitaxial growth of InP was performed on patterned Si(1 0 0) substrates. The growth temperature was rapidly cooled, then the crystal growth proceeded at constant temperature. As a result, area-selective epitaxy (ASE) and slight epitaxial lateral overgrowth (ELO) layers were achieved in narrow openings and small nuclei were observed in the wide openings. X-ray diffraction results show that the lattice strain in the InP nuclei on the Si substrate was fully relaxed. Huber etching revealed the dislocation-related etch pits in ASE layers, and it is shown that the etch pit density (EPD) is dependent on the length of open seed area.
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