Selective epitaxial growth of Si 1− xGe x by cold-wall ultrahigh vacuum chemical vapor deposition using disilane and germane

Abstract

Selective epitaxial growth of Si 1− x Ge x alloys in a cold-wall-type ultrahigh vacuum chamber using pure disilane and pure germane was studied at a constant temperature 550°C. The germanium content in the grown layer was increased as the germane flow rate increased. In all cases, the germanium content in the solid is less than the germane content in the gaseous source. The growth rate was enhanced by germane addition. It is conceivable that the growth rate enhancement is due to increasing the germanium content in the solid. Selectivity was constant at high disilane flow rate and increased at low disilane flow rate by germane addition. Selective epitaxial growth of Si 1− x Ge x was successfully achieved with high growth rate.