Abstract
Selective emitter formation for crystalline silicon (c-Si) solar cells is very important to increase conversion efficiency. Laser doping (LD) is a very simple method for selective emitter formation because the use of masks and photolithography is unnecessary. In this paper, we report an application of LD to form a selective emitter in n-type c-Si solar cells. Our results demonstrated that the doping profile of the selective emitter showed a high doping concentration and deep doping depth. The conversion efficiency of solar cells with selective emitter formed by LD was increased. In particular, the short-circuit current density was considerably increased.
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