Abstract
Magnetoelectric Multifunctional Nanodevices In article number 2206824, Run-Wei Li, Xiaojian Zhu, and co-workers demonstrate the selective dual-ion manipulation in a Pt/HfO2−x/NiOy/Ni magnetoelectric nanodevice and the reconfiguration of its magnetoresistance. A proof-of-concept magnetoelectric device with integrated memory and encryption functionality is designed for the secure storage of information.
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