Selective doping of a single ambipolar organic semiconductor to obtain P- and N-type semiconductors

Abstract

•A well-balanced ambipolar organic semiconductor is synthesized as host semiconductor •Proper doping of the single host semiconductor yields both p- and n-type semiconductors •Organic PN homojunctions and corresponding photodiodes are constructed and characterized The idea of acquiring p- and n-type organic semiconductors (OSCs) through controllable doping of a single OSC is highly attractive. However, realization of this idea remains challenging due to the difficulties in achieving effective p- and n-doping on a single OSC simultaneously. Herein, by synthesizing a solution-processable conjugated polymer with well-balanced ambipolar transport as the host semiconductor and using appropriate dopants, we demonstrate the feasibility of obtaining p- and n-type OSCs from a single OSC. The successful doping control of the polarity and electrical property of the OSC is confirmed by electrical characterizations on doped films and devices. Then, solution-processed organic PN homojunctions based on the p- and n-doped OSC films are constructed, which provide good platforms for studying organic semiconductor physics and for fabricating functional devices like photodiodes. The results provide a paradigm for utilizing doping technique in organic semiconductor devices similar to that in silicon-based devices. The idea of acquiring p- and n-type organic semiconductors (OSCs) through controllable doping of a single OSC is highly attractive. However, realization of this idea remains challenging due to the difficulties in achieving effective p- and n-doping on a single OSC simultaneously. Herein, by synthesizing a solution-processable conjugated polymer with well-balanced ambipolar transport as the host semiconductor and using appropriate dopants, we demonstrate the feasibility of obtaining p- and n-type OSCs from a single OSC. The successful doping control of the polarity and electrical property of the OSC is confirmed by electrical characterizations on doped films and devices. Then, solution-processed organic PN homojunctions based on the p- and n-doped OSC films are constructed, which provide good platforms for studying organic semiconductor physics and for fabricating functional devices like photodiodes. The results provide a paradigm for utilizing doping technique in organic semiconductor devices similar to that in silicon-based devices.