Selective Cu Electrodeposition for Sub-Micrometer Redistribution Layers

Abstract

The density of integrated circuit (IC) was doubled by shrinking the feature size in semiconductor industry. An improvement in density of standard interconnection and the packaging technology is much slower than the IC trends. To overcome the increasing I/O interconnect gap, the semiconductor packaging technology has been driven by many researchers and companies over the many years. The redistribution layers (RDL), one of the important parts for the package process, play a role to rearrange I/O connections from the die to substrate. For fine line pitch below 10μm, the damascene RDL process was proposed. The flow of damascene RDL process was composed of photoresist patterning, a metal layer deposition, Cu electrodeposition and chemical-mechanical planarization (CMP). During the Cu electrodeposition for the damascene RDL process, Cu overburdens were formed on top surfaces of sub-micrometer trenches. Typically the CMP process has been used to remove these overburdens in semiconductor industry, however, this surface planarization process caused an increase in process cost. For prevent the Cu overburden at low cost, the selective Cu electrodeposition which is process filling only trench is required. The selective Cu electrodeposition can be achieved by μCP with various additives. The microcontact printing (μCP) process which transfers the self-assembled monolayers (SAMs) on the top surface of trenches can be one of the solutions preventing the Cu deposition on these top surfaces.[1-2] SAMs are organic molecules that formed spontaneously on the solid surface by chemisorption and organization of alkanethiol, silane, and so forth.[3] In this research, flat polydimethylsiloxane (PDMS) stamp is used for providing on the top surface of patterned substrate. Selective Cu electrodeposition was proceeded on trench in CuSO4 1 M/H2SO4 0.58M electrolyte with various additives. In this study, electrochemical behavior of additives was studied by cyclic voltammetry and selective electrodeposition process was investigated with various additives, applied potential, charge density. The µCP process show the effective suppression of Cu growth on the top surface of trenches so that Cu overburden thickness was significantly reduced. This result reveals the feasibility of Cu trench-selective deposition below 10 μm. The μCP method with various additives shows the possibility of replacing surface planarization process which removes overburden of Cu for the RDL process.. [1]Y.Xia and G. Whitesides, "Soft lithography", Annu. Rev. Mater. Sci., vol. 28, no. 1, pp. 153-184, 1998. [2]S.Alom Ruiz and C. Chen, "Microcontact printing: A tool to pattern", Soft Matter, vol. 3, no. 2, pp. 168-177, 2007. [3]P.Laibinis, G. Whitesides, D. Allara, Y. Tao, A. Parikh and R. Nuzzo, "Comparison of the structures and wetting properties of self-assembled monolayers of n-alkanethiols on the coinage metal surfaces, copper, silver, and gold", J. Am. Chem. Soc., vol. 113, no. 19, pp. 7152-7167, 1991.