Selective contacts for silicon-doping superlattices

Abstract

Results are presented that show that selective n- and p-type contacts with low resistance have been formed on silicon-doping superlattices. The superlattices were grown by molecular-beam epitaxy through a silicon mask to create built-in blocking regions at the edges of the mesas. Contacts of Mg2Si for the n-side and PtSi for the p-side were formed along the edges of the mesa, resulting in a successful diode-like behavior. A surface etch to remove doping impurities from the region surrounding the superlattice mesa was required to maintain contact–substrate isolation.