Abstract
Localized growth of metal lines on Si wafers has been demonstrated using a focused Ga+ beam to selectively enhance the nucleation site density during a thermal chemical vapor deposition process. Iron and aluminum lines with thicknesses up to 2 μm have been formed using ion line doses between 4×1010 and 4×1012 Ga+/cm. Thus, the sensitivity of this process can be several orders of magnitude greater than ion beam induced polymerization techniques performed at room temperature. Auger analysis indicated that the total impurity concentration deep within the metal lines was roughly 15%. No Ga was detected in the deposited films.
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