Abstract
GaAs hexagonal air-hole arrays fabricated by selective-area metal-organic vapour phaseepitaxy (SA-MOVPE) on patterned GaAs(111)B substrates are promising for applicationsto hexagonal air-hole-type two-dimensional photonic crystal (2D-PhC) slabs,because the grown structures exhibit smooth flat surfaces surrounded by crystalfacets. In this paper, we describe SA-MOVPE carried out under various gas-flowsequences in order to reduce the growth temperature, and to obtain uniform air-holearrays without lateral over-growth (LOG). We found that the growth rate in thepattern region and LOG were closely related to the effective As coverage and thedesorption rate of the source materials. By optimizing SA-MOVPE, we obtaineduniform hexagonal air-hole arrays with almost no LOG for arrays with 500–400 nmperiodicity using alternate supply of the source materials (flow-rate modulationepitaxy mode). Finally, we successfully fabricated air-bridge-type hole arrays usingselective etching of a sacrificial layer for vertical confinement of light in 2D-PhCs.
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