Abstract
Selective area mass transport regrowth of GaN was performed on wafers with etched wells and SiO2 mask. The samples were annealed in NH3 and H2 flow, with no gallium precursor. At 1060°C, only little mass transport occured, but the sidewall morphology changed, depending on crystallographic orientation. At 1160°C, the sidewalls grew out about 1 µm in 1 min, independent of orientation. The technique can potentially be performed in an annealing chamber, providing a low cost regrowth process. A promising application is ohmic contact regrowth to high composition AlGaN/GaN high electron mobility transistors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.