Abstract
The ability to tailor the bandgap of III–V compound semiconductors spatially, across the wafer is highly desirable for monolithically integrating photonic components with multi-functions. Using rapid thermal annealing with SiO2 and TiO2 capping layers as a selective area intermixing technique, we have demonstrated selective area bandgap tuning of III–V quantum dot (QD) material on a silicon (Si) substrate. Electrically pumped InAs/GaAs QD lasers directly grown on Si with dual-wavelength lasing emissions of 1275 and 1313 nm have been fabricated by this technique. This result indicates that the selective area intermixing technique can potentially be used in optical integrated circuits for Si photonics.
Highlights
Silicon (Si) photonics-enabled optical interconnections is one of the strongest candidates to replace traditional copper interconnections in information systems
The dynamic properties of III–V/ Si quantum dot (QD) lasers have been studied, in terms of relative intensity noise [16, 17], modulation bandwidth [18, 19], gain switching [20] etc. These results demonstrate the high potential of Si-based III–V QD lasers to be used as on-chip light sources for Si photonics
A comparative study of the intermixing effect in InAs/GaAs QDs directly grown on Si capped by separated SiO2 and TiO2 layers, to determine the optimal thermal annealing conditions, is reported first
Summary
Silicon (Si) photonics-enabled optical interconnections is one of the strongest candidates to replace traditional copper interconnections in information systems. The dynamic properties of III–V/ Si QD lasers have been studied, in terms of relative intensity noise [16, 17], modulation bandwidth [18, 19], gain switching [20] etc. These results demonstrate the high potential of Si-based III–V QD lasers to be used as on-chip light sources for Si photonics
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