Abstract
We report on the fabrication of highly uniform hexagonal nanopillars with singleInGaAs/GaAs quantum wells (QW) on GaAs(111)B substrate by selective-areametal–organic vapour phase epitaxy. The standard size deviation of the fabricatednanopillars with single InGaAs/GaAs QW is about 2% and the standard deviation in theirheight about 5%. With a decrease in temperature, the peak position shifts to shorterwavelength, the peak intensity increases and the peak width decreases. The calculated wellwidth based on the finite square potential well model taking account of the strain effectand the piezoelectric effect is smaller than the value determined from the growthrate and the growth time, which is mainly due to indium segregation and itsincorporation into the subsequent GaAs layer grown at the higher temperature.
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