Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

Abstract

AbstractSelective area growth of GaN nanorods by metalorganic vapor phase epitaxy is highly demanding for novel applications in nano‐optoelectronic and nanophotonics. Recently, we report the successful selective area growth of GaN nanorods in a continuous‐flow mode. In this work, as examples, we show the morphology dependence of GaN rods with µm or sub‐µm in diameters on growth conditions. Firstly, we found that the nitridation time is critical for the growth, with an optimum from 90 to 180 seconds. This leads to more homogeneous N‐polar GaN rods growth. A higher temperature during GaN rod growth tends to increase the aspect ratio of the GaN rods. This is due to the enhanced surface diffusion of growth species. The V/III ratio is also an important parameter for the GaN rod growth. Its increase causes reduction of the aspect ratio of GaN rods, which could be explained by the relatively lower growth rate on (000‐1) N‐polar top surface than it on {1‐100} m‐planes by supplying more NH3 (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)