Abstract
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al-Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.
Highlights
Selective area growth of GaN nanowires (NWs) is a promising approach for obtaining defect-freeNW arrays with microstructural, compositional, and spatial uniformity as well as precise position control [1,2,3,4]
We have examined the selective area growth of GaN nanostructures by plasma-assisted molecular beam epitaxy (PAMBE) on Si(111)
Reported is the lattice mismatch expressed as a percentage, ∆ao (%), for relaxed GaN, ao = 0.3189 nm [9], relative to the in-plane lattice parameter of each buffer:
Summary
NW arrays with microstructural, compositional, and spatial uniformity as well as precise position control [1,2,3,4]. It is, a complex process with conflicting requirements. Lateral growth is necessary to fill mask openings, yet conditions for this can be substantially different from those for vertical NW growth. Defects such as dislocations, inversion domains, and stacking faults, must be excluded to achieve optimum performance. Several growth methods, including metal-organic chemical vapor deposition (MOCVD), plasma-assisted molecular beam epitaxy (PAMBE), and hydride vapor phase epitaxy, have been used on Al2 O3 and Si(111)
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