Abstract
We report selective area etching of AlGaAsGaAs heterostructures using AsCl3 in a CBE reactor. SiO2 is used to define the dielectric mask. The morphology of etched layers, the purity and the electrical characteristics of regrown interfaces are studied. In the case of GaAs, we have found that in situ TDMAAs cleaning prior to in situ etching improves drastically the morphology of the etched surface by reducing the surface contamination. AlGaAsGaAs heterostructures were buried under a GaAs cap layer to protect them during SiO2 processing. The etching rate is significantly reduced by the presence of aluminum in the AlGaAs layers. Etched AlGaAs layers are mirror like. Etch/regrowth interfaces on AlGaAs are contaminated due to high reactivity of aluminum and lack of purity of the different sources used for etching and regrowth. However, the contamination is reduced compared to direct regrowth on processed AlGaAs layers.
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