Abstract
The n+-GaN epilayers were synthesised by PA MBE on the SiO2 patterned GaN/c-Al2O3 templates, grown by MOCVD. Formation of the polycrystalline GaN atop of the SiO2 mask during PA MBE was observed. It was found that macroscopic voids at the interface polycrystalline GaN/SiO2/n-GaN template appeared during the PA MBE process. The polycrystalline GaN film was completely removed by etching in hot aqueous KOH solution. Hall measurements have shown that the value of electron concentration in n+-GaN contact layer is about ne∼4.6×1019 cm-3.
Highlights
Wide bandgap semiconductors, such as gallium nitride (GaN), play a special role in a progress of modern electronics
The polycrystalline GaN film was completely removed by etching in hot aqueous KOH solution
Hall measurements have shown that the value of electron concentration in n+-GaN contact layer is about ne~4.6×1019 cm-3
Summary
Wide bandgap semiconductors, such as gallium nitride (GaN), play a special role in a progress of modern electronics. The n+-GaN epilayers were synthesised by PA MBE on the SiO2 patterned GaN/cAl2O3 templates, grown by MOCVD. It was found that macroscopic voids at the interface polycrystalline GaN/SiO2/n-GaN template appeared during the PA MBE process. Hall measurements have shown that the value of electron concentration in n+-GaN contact layer is about ne~4.6×1019 cm-3.
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