Abstract
An additive three step process has been developed for patterned deposition of Cu onto poly(tetrafluoroethylene) (PTFE). The first step involves patterned irradiation with X-rays or electrons which is thought to cross link the PTFE surface; step two involves chemical etching with the result that only the non-irradiated areas are etched; and step three involves selective chemical vapor deposition (CVD) of Cu onto the etched surface at 200 C using (hexafluoroacetylacetonato)Cu(I) trimethylphosphine ((hfac)Cu(PMe{sub 3})). The non-irradiated areas of the surface are covered by a continuous, dense Cu film with X-ray photoelectron spectra show to contain only surface impurities that are easily removed by a short Ar ion sputter. The irradiated areas show the presence of only C and F, characteristic of PTFE.
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