Abstract
Different techniques are used to realize optoelectronic integration. We particularly study non-planar selective area chemical beam epitaxy using a dielectric film as a mask. We first improve the pre-epitaxial technological process to reduce the threshold of selective growth temperature for both InP and GaInAsP (1.15 μm) materials. The characterization of the selective growth uniformity in thickness and in composition (for the alloys) gives excellent results. Moreover, the shape of the cross-sectional profile near the edges of a selectively grown InP/GaInAsP/InP double heterostructure appears to be promising for butt-coupling integration. Finally, this work is applied to the precise determination of butt-coupling efficiency between two waveguides, one being selectively grown.
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