Abstract
Chemical mechanical polishing (CMP) process have been heavily utilized in throughout the semiconductor manufacturing processes from front-end to back-end for decades. However, CMP process is still in its early stage for advanced packaging because of the difficulties observed with implementation of CMP process such as: low removal rate, poor selectivity, and elevated surface roughness and defects on the organic polymer film. Nevertheless, CMP process is becoming an essential part of the 2D advanced packaging and beyond in order to achieve smaller pitch and improve re-distribution layer (RDL) process.In this paper, we focus on highly tunable removal rate and selectivity, and low defectivity performance slurry for epoxy mold compound (EMC) with silica filler and Cu pads.
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