Abstract
New possibilities of the method of secondary ion mass spectrometry (SIMS) in application to quantitative analysis of the atomic composition of InGaAs nanoclusters in GaAs matrix are considered. Using In x Ga1–x As test structures, nonlinear calibration dependences of the yield of secondary In2As and InAs ions on the concentration of indium have been determined, which do not involve normalization to the matrix elements (Ga or As) and make possible selective analysis of the composition of nanoclusters. Using these relations, quantitative depth profiles of indium concentration were measured and statistical characteristics of the arrays of nanoclusters in InGaAs/GaAs heterostructures were determined.
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