Abstract
This paper presents the guidelines for selecting suitable power semiconductor devices for the dual active bridge (DAB) DC-DC converter targeting aerospace applications. The main power loss in a switching power supply is the loss associated with power semiconductor devices. The high frequency operation of power electronics reduces the size of magnetic components. As a result, a smaller and lighter circuit design is feasible. However, the high switching frequency increases the power device losses. Therefore, the selection of appropriate power devices is essential to design efficient power electronics. This paper clearly presents the guidelines for selecting suitable power devices (IGBTs) for a 20kW, 540V/125V, 20kHz DAB converter prototype meant for use in an aerospace application.
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