Abstract
In this paper we investigate the optimal choice of rectangular meshes for the solution of nonlinear dopant diffusion problems in semiconductor process modelling. Firstly we show some results giving better error monitor functions as criteria for obtaining an adapted mesh. Secondly we survey some 1D methods to implement the error equidistribution law and produce the mesh. Finally we implement the new mesh generation strategies in the finite element simulator ASWR of COMPOSITE and report on the full simulation results.
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Schedule a callMore From: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
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