Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors

Abstract

This paper presents a method-based investigation on the application of low dimensional materials like graphene, carbon nanotube (CNT), transition metal dichalcogenides (TMDCs) in tunnel field effect transistors (TFETs) for high on-current requirements. Three multi-criteria decision making methods (MCDM) are employed to arrive at a consensus on the appropriate material. The Ashby technique, the Technique for Order Preference by Similarity to Ideal Solution (TOPSIS) and VlseKriterijumska Optimazicija I Kompromisno Resenjein in Serbian (VIKOR) are utilized using constraints which decide a TFET’s performance. In order to select the material, dominant parameters have been included in the formulation which includes intrinsic material properties like the band gap, dielectric constant and electron effective mass along with an extrinsic parameter, namely, the on-state current to the off-state current ratio. The analysis demonstrates a remarkable agreement between the results of Ashby, TOPSIS and VIKOR methods, and concludes that carbon nanotube (CNT) has the most potential amongst all the candidates to be employed in the next generation TFETs.