Abstract
InP deposition by metalorganic chemical vapor deposition on implanted substrates has different qualities according to the damage density of the substrate surface induced by the bombardment. For low damage densities, the layer deposited is monocrystalline. For middle damage densities, the deposition is composed of nuclei. For high damage densities, there is no deposition on the implanted surface, and in this case, we observe a material transport. By using the ion implantation technique in conjuntion with metalorganic chemical vapor deposition, it is possible to have selective area growth of InP.
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