Selected-area deposition of diamond films on [formula omitted] surfaces with microwave plasma enhanced CVD

Abstract

Selected-area deposition (SAD) of diamond films with selectivity greater than 200 was achieved on patterned SiN Si surface, using microwave plasma CVD method. Among the important parameters that can modify the plasma characteristics, the total pressure and CH 4-to-H 2 ratio were observed to influence the selected-area deposition behaviors most significantly. The number density of diamonds grown on Si surface decreased rapidly as the total pressure reduced from 75 Torr to 60 Torr. The selectivity of SAD diamond films increased as the CH 4-to-H 2 ratio increased from 9:300 sccm to 15:300 sccm. These phenomena were accounted for by the decrease in proportion of ion species with CH 4-to-H 2 ratio such that the formation of sp 3 bonds on Si surfaces is suppressed. Scanning electron microscopy (SEM) and Raman spectroscopy indicated that the quality of diamonds grown to SiN surface was optimized for the SAD films deposited under 2500 W microwave power with CH 4-to-H 2 = 15:300 sccm.