Abstract
Zn diffusions from spin-on films were performed into InP/InGaAs/InP heterostructures suited for fabrication of heterojunction bipolar transistors. A strong segregation occurred at the InGaAs/InP heterojunctions enriching the Zn concentration in InGaAs by about an order of magnitude. From the Zn concentration profiles the relevant diffusion and segregation parameters were determined. Using these data an accurate numerical modeling and improved process control of the Zn diffusion into InGaAs/InP multilayer heterostructures can be achieved.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
