Abstract
Photoemission measurements have been performed on Li covered Si samples. The Li layer is formed: (i) by adsorption, (ii) by segregation of dissolved Li to the Si surface. These two methods of activation give comparable results: the photoemissive quantum yield is about 10 per cent at 5 eV and the threshold is 2.5 eV for p type Si. Moreover, the surface layer obtained by segregation seems highly pure and uniform. The segregation kinetics are analyzed using a simple theoretic model.
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