Abstract
When a GaAs(100) surface was mechanically scribed by a diamond tip in an ultrahigh vacuum (UHV), surface segregation of As was observed using X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The same phenomenon was also seen when the surface was abraded in air using emery paper. In the latter case, angle-resolved XPS analysis of As3d and Ga3d spectra showed the formation of As-As bonds on the abraded surface. Ga-Ga bonds existed beneath the layer of As-As bonds isolated from Ga-As bonds. The mechanism of the surface segregation of As is discussed.
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