Abstract
Segregation of impurities in Si under oxygen ion bombardment has been studied using secondary ion mass spectrometry and high resolution Rutherford backscattering and channeling. Anomalously large broadening was observed under oxygen bombardment at angles of incidence < 30° from the surface normal. This broadening was found to be correlated with the angular dependence for surface oxide formation, and is explained in terms of Gibbsian segregation, driven by the different heats of formation for SiO 2 and the oxide of the impurity. The extent of segregation, found to be larger for bombardment at elevated temperatures, is determined by the mobility of impurities in the oxide.
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