Abstract
An impact of the vacuum anneal of Al/Ge(111) structure on the Ge segregation has been investigated to get an insight into the precise control of ultrathin Ge crystalline growth. The Al/Ge(111) structure was prepared by thermal evaporation of Al on wet-cleaned Ge(111) and then vacuum annealed without air exposure to promote Ge formation on the Al surface. The Ge formation and its chemical bonding features were evaluated by X-ray photoelectron spectroscopy analysis. In addition, changes in the average Ge thickness depending on annealing temperature and time were crudely estimated. We found that the annealing temperature had a greater effect than time on the control of sub-nanometer scale Ge growth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
