Abstract
Crystal growth and segregation behavior in a confined, vertical melt zone in an InSb system were studied by allowing the upper and lower crystal‐melt interfaces to converge through controlled power reduction. Segregation inhomogeneities during the initial stages of solidification appeared exclusively in the upper crystal segment which grew under destabilizing thermal gradients. At decreased zone height, irregular dopant inhomogeneities, identical in appearance, were simultaneously formed in both the upper and lower crystal segments. With continuing solidification the irregular and random inhomogeneities became periodic (oscillatory) in nature. Periodic dopant striations of decreasing frequency were observed to the coalescence point of the two interfaces. The random and periodic segregation inhomogeneities, which formed simultaneously at the converging growth interfaces, were attributed to isostatic pressure effects which originate in the volume expansion of the confined solidifying melt.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
