Abstract
Highly oriented films of an electron accepting polymer semiconductor, poly{[N,N'-bis(2-octyldodecyl)-1,4,5,8-naphthalenedicarboximide-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (PNDI2OD-T2), are obtained by two different methods, namely directional epitaxial crystallization (DEC) on 1,3,5-trichlorobenzene (TCB) and epitaxy on friction transferred poly(tetrafluoroethylene) (PTFE) substrates. Two distinct polymorphs with unprecedented intrachain resolution are identified by high-resolution transmission electron microscopy (HR-TEM). Form I is obtained by DEC on TCB, whereas highly oriented films of form II are obtained on PTFE substrates after melting at T = 300 °C and cooling at 0.5 K/min. In form I, both electron diffraction and HR-TEM indicate a segregated stacking of bithiophene (T2) and naphthalene diimide (NDI) units forming separate columns. In form II, a ∼c/2 shift between successive π-stacked chains leads to mixed π-overlaps of T2 and NDI. Form I can be transformed into form II by annealing at T > 250 °C. The different π-stacking of NDI and T2 in the two polymorphs have characteristic signatures in the UV-vis spectra, especially in the charge transfer band around 750 nm which is also observed in spin-coated films.
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