Abstract
ABSTRACTA segmented silicon based multimode to dual port slot structure on silicon-on-insulator platform is proposed which can be used as a refractive-index sensing device. The introduction of segmentation leads to tuning the effective index of the device which results in increasing compactness of the sensing device. Although the structure supporting TM mode is more compact than TE mode, but TE mode is considered here as vertical slots in the output section enhances optical signal in the slots for TE mode only. By considering dual output, the device length is reduced further as dual self-imaging length is less compared to single self-imaging distance for symmetrical multimode section input. The surface sensitivity of the structure has a typical value of∼2249 nm/RIU. Relative sensitivity can be calculated from the ratio of field amplitudes of the arms of the dual output. Matrix method and 2D FDTD is used for the entire analysis.
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