Abstract
Ab initio calculations show that the bandgap of MoS2-WSe2 heterostructures can be significantly tuned by thickness engineering, perpendicular electric fields, and forming spin-valley coupling Dirac cones at the K and K′ valleys. The intrinsic band structure of the MoS2-WSe2 heterobilayer is found to be a direct bandgap, in which the conduction band minimum is located at the MoS2 layer, but the valence band maximum lies in the WSe2 layer, forming a type-II band alignment, which can be changed easily into type-I band alignment by applying perpendicular electric fields. The special dispersion relation like the Dirac cone and each of these band alignments have particular applications in enabling different varieties of devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
