Abstract
Chemical processing of two-dimensional (2D) transition metal dichalcogenides has attracted immense attention due to their unique optical, electrical, and catalytic properties. In this paper, we show that under special conditions during seedless chemical vapor deposition (CVD), it is possible to grow large-area 2D WS2 layers with disc-shaped morphology, which has been scarcely reported. Detailed characterizations of the CVD-grown layers by Raman spectroscopy, atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy have revealed that a gradient in the precursor concentration in the gas phase and strain energy in the deposited hexagonal clusters favor disc-shaped growth of the 2D metal sulfide. The formation of large-area films with few millimeters in the lateral direction is also feasible by the continuation of the process. Herein, barriers against edge diffusion facilitate symmetric growth on the nucleates to develop ultrathin and large-area films. The process is attractive for the fabrication of optoelectronic devices by 2D semiconductor materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
