Abstract
A novel apparatus and technique was developed which allowed the growth of 40 mm diameter single crystals of CdS by vapor transport in a semi-closed system on a cooled seed wafer. Crystals with dimensions larger than the seed were obtained, thus making the process independent of the size limitations imposed by the non-seeded growth methods.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
