Seeded Growth of AlN Layers on Al‐ and N‐Polar AlN Seeds by the Cu–Al–Ca Solution Growth Method

Abstract

Resistive Switching In article number 2300060, and colleagues have successfully grown AlN layers on both N-polar and Al-polar seed crystals using a Cu–Al–Ca solution system. The authors compared the surface morphologies by stereoscopic microscopy and optical microscope, growth rates by Cross-sectional SEM images, growth qualities by HRXRD, Raman and PL for the Al-polar and N-polar surfaces.