Abstract
Epitaxial films of CeO2 and Y2O3 on RABiTS metal tapes have been obtained by pulsed laser deposition. The dependence of the film crystal orientation on the temperature of synthesis has been studied. It is established that Y2O3 films grow with 100% (100) orientation, whereas a parasitic orientation is present in CeO2 films obtained in the entire range of growth temperatures. The texture sharpness in the substrate plane amounted to 8°. Electron-microscopic examination showed that an increase in the temperature of synthesis leads to the appearance of cracks on the surface of CeO2 films, while the surface of Y2O3 films remains continuous in the entire range of growth temperatures. Thus, Y2O3 films most fully obey the requirements to seed layers in (i) being epitaxial with 100% (100) crystal orientation, (ii) inheriting the substrate texture, and (iii) having a smooth crack-free surface.
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