Abstract

Ruthenium thin films were deposited at 260-400°C on hole substrates by metallorganic chemical vapor deposition (MOCVD) using (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp)] for the Ru source. The microstructure, conformability, crystallinity, and resistivity of the films were examined. Conformal films whose resistivity was below 30 μΩ-cm were deposited below 300°C on SiO 2 /TiAIN/Ti/SiO 2 /Si(100) hole substrates with aspect ratio of 1.7. Finally, conformal films with a step coverage of 97% were deposited on SiO 2 /Si hole substrates, even those with a high aspect ratio of 6.4, by using Ru(DMPD)(EtCp) without a seed layer.

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