Abstract
The influence of sulfuric acid concentration in copper sulfate plating solutions on the stability of a 1000 Å seed layer in Damascene structures is presented. Immersion of a seeded wafer into the plating solutions results in chemical dissolution, thinning the copper seed layer. Anodic current density steps initiate seed layer corrosion resulting in exposure of the underlying TaN barrier layer. Large applied current density steps (>300 μA/cm 2) or high free sulfuric acid concentration causes very rapid dissolution of the seed layer. The anodic dissolution efficiency is greater than 100% indicating that chemical dissolution of copper is contributing to the disappearance of the copper seed layer.
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