Abstract
A seed layer-assisted chemical bath deposition method performed at low temperature has been developed to grow uniform and high-quality crystal cuprous oxide (Cu2O) nanoparticles on transparent conductive/glass substrates. The annealing process by continuous beam (CW) of CO2 laser was used prior to growing the Cu2O nanoparticles. In this study, the controlled synthesis of Cu2O films was investigated by controlling the growth temperatures at 55 °C, 60 °C, 65 °C, and 70 °C, respectively. The modified seeding substrate reflect enhanced structural properties with laser annealing temperature of 450 ℃. In addition, Cu2O nanoparticles with flower-like stricter show a greater density containing a smaller particle with 75 nm average dimension and flower particle size was about 85 nm. Results suggest an effective synthesis route for developing high-quality Cu2O nanoparticles for optical and electronic applications.
Highlights
Cuprous oxide (Cu2O) is a semiconducting, cubic crystal structure, inexpensive and low toxicity nature with relatively low direct band gap of about 2.0 2.6 eV [1, 2]
These films were grown on indium-doped tin oxide (ITO) as seed layer which deposited on glass substrates using magnetron sputtering-RF
Cu2O nanoparticles growth using seed layer-assisted chemical bath deposition (SCBD) method employing the thermal effect of CW Carbon dioxide laser to annealed the seed layer and controls the morphological, optical, and structure properties are presented for the first time
Summary
Cuprous oxide (Cu2O) is a semiconducting, cubic crystal structure, inexpensive and low toxicity nature with relatively low direct band gap of about 2.0 2.6 eV [1, 2]. Et al [37] reported uniform and crystalline thin film of Cu2O on corning glass substrates coated CuxS seed layer by CBD method; the effect of pH and growth temperature (≤ 70°C) on the electrical, morphological, optical and structural properties of Cu2O thin film was investigated. Laser annealing using continuous or pulsed wave depends on various conditions that leads to melting surface of semiconductor film as resulted from the absorption of light energy which converted to heating This heat energy is transmitted to the electronic structure and to phonons rapidly with less than of 1 Psec [54, 55]. Cu2O nanoparticles growth using SCBD method employing the thermal effect of CW Carbon dioxide laser to annealed the seed layer and controls the morphological, optical, and structure properties are presented for the first time
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