Abstract
ABSTRACTNon-stoichiometric and impurity doped titanium dioxide materials are good candidates for use in high temperature thermoelectric devices. Nanolayers of non-stoichiometric (TiO2-x) thin films were deposited on Al-foil by atomic layer deposition growth method. X-ray diffraction experiments showed anatase phase for these nanolayers. This crystal structure was maintained even after an annealing treatment of 600 °C for 60 minutes under an O2 pressure of ∼ 10 psi. This investigation presents for the first time how Al-foil can be functionalized by manipulating the Seebeck coefficient of these TiO2-x nanolayers.
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