SEE and TID Response of Spansion 512Mb NOR Flash Memory

Farokh Irom,Duc N Nguyen

doi:10.1109/redw.2010.6062520

SEE and TID Response of Spansion 512Mb NOR Flash Memory

Farokh Irom, Duc N Nguyen

https://doi.org/10.1109/redw.2010.6062520

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Publication Date: Jul 1, 2011

Citations: 12

Affiliation: Jet Propulsion Laboratory

#Total Ionizing Dose #Single Event Effect + Show 8 more

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Abstract

Single event effect (SEE) and total ionizing dose (TID) response for Spansion 512Mb NOR flash memory are reported. Three SEE phenomena were investigated: single event upsets (SEUs), single event functional interrupts (SEFIs), and high current events. TID measurements were performed in two modes: Erase/Program/Read and Read Only.

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