Abstract
This work was supported by the Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-IT1601-01. The chip fabrication and EDA tool were supported by the IC Design Education Center (IDEC), Republic of Korea.
Highlights
Hardware-level physical security has been highly required, as secure data exchange via various communication networks and devices, such as a wireless sensor network, is increased.[1,2] Physical attacks are threats to the integrated circuits (ICs) implemented in electronic devices containing the secure information of the user, such as smartcards and smartphones
Fault injection attacks are highly dangerous because of their effectiveness and low cost. They are a threat to data security as they can extract the secure information stored in the target device
Fault injection attacks can be made to occur by several approaches such as clock glitching, voltage glitching, overclocking, electromagnetic (EM) pulses, and temperature.[3]. A temperature fault injection attack changes the environment temperature of the attacked chip, causing it to operate outside of the allowed operating temperature range, and extracts the secure information stored
Summary
Hardware-level physical security has been highly required, as secure data exchange via various communication networks and devices, such as a wireless sensor network, is increased.[1,2] Physical attacks are threats to the integrated circuits (ICs) implemented in electronic devices containing the secure information of the user, such as smartcards and smartphones They can be classified into two categories: invasive and noninvasive attacks. Fault injection attacks are highly dangerous because of their effectiveness and low cost They are a threat to data security as they can extract the secure information stored in the target device. A secure circuit with a low-power on-chip temperature sensor is presented for the detection of temperature fault injection attacks. The XOR gate is implemented to detect and shut down the protected circuit when the temperature is below −10 °C or above 80 °C by using the two comparator output signals
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