Secondary phase formation and surface modification from a high dose KF‐post deposition treatment of (Ag,Cu)(In,Ga)Se2solar cell absorbers

Abstract

AbstractIn this study, we assessed the potential of KF‐post deposition treatment (PDT) performed on a silver‐alloyed Cu (In,Ga)Se2(ACIGS) solar absorber. ACIGS absorbers with Ag/Ag + Cu ratio (Ag/I) close to 20% were co‐evaporated on a Mo‐coated glass substrate and exposed toin‐situKF‐PDT of various intensities.The current–voltage characteristics indicated that an optimized PDT can be beneficial, increasing in our study themedianVocand efficiency values by +48 mV and + 0.9%abs(from 728 mV and 16.1% efficiency measured for the sample without PDT), respectively. However, an increased KF‐flux during PDT resulted in a net deterioration of the performance leading tomedianVocand efficiency values as low as 503 mV and 4.7%.The chemical composition analysis showed that while the reference absorber without any post deposition treatment (PDT) was homogeneous, the KF‐PDT induced a clear change within the first 10 nm from the surface. Here, the surface layer composition was richer in K and In with an increased Ag/I ratio, and its thickness seemed to follow the KF exposure intensity. Additionally, high‐dose KF‐PDT resulted in substantial formation of secondary phases for the ACIGS. The secondary phase precipitates were also richer in Ag, K, and In, and electron and X‐ray diffraction data match with the monoclinic C 1 2/c 1 space group adopted by the Ag‐alloyed KInSe2phase. It could not be concluded whether the performance loss for the solar cell devices originated from the thicker surface layer or the presence of secondary phases, or both for the high‐dose KF‐PDT sample.