Abstract
Secondary ion mass spectrometry (SIMS) has become an established method for the analysis of trace elements in semiconductor and other materials. The flexibility of this technique has led to its use in a wide variety of materials analysis problems. It is routinely used to determine dopant and trace contaminant levels in semiconductor devices of micron and submicron dimensions. It is used to determine isotopic abundances in mineral phases and it is used to study the localization of trace elements in biological tissues. Time-of-flight SIMS is becoming a standard tool for the analysis of polymeric and other high-mass materials. SIMS is a complementary technique for methods such as Auger electron spectroscopy and photoemission spectroscopy, discussed in Chapters 4 and 9 in this volume, respectively, and for the technique of laser ionization mass spectrometry, discussed in Chapter 10. This chapter will outline basic principles of the SIMS technique, the equipment used for the technique, and several closely related techniques (SIMS variants). Information which can be obtained by SIMS will be discussed and several examples presented.
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