Secondary ion mass spectrometry of dopants and impurities in compound semiconductors: Depth profiling of homo- and heterostructure

Abstract

SIMS has been very successfully applied to the analysis of semiconductor materials. This paper presents some important results concerning the problems of III-V compound epitaxial layers: (i) high-purity GaAs epitaxial layer characterisation, (ii) the study of Si δ-doped GaAs in a AlGaAs heterostructure, (iii) parasitic As contamination of InP buffer layer in optoelectronic materials, (iv) crystal perfection and the highest allowed Si and Fe doping level in InP. Chemical and crystal quality analyses are often carried out on the same sample for a better assessment of the electronic material.