Abstract
Novel secondary ESD clamp solutions to boost CDM robustness for both RX (input) and TX (output) circuits along with dual diode of primary ESD clamp to meet over 6-Gbit/s SerDes are presented. For RX circuit, active PMOS clamp with no voltage overshoot is used as secondary clamp to GND. For TX circuit, by constructing a secondary ESD path through the pre-driver and pumping-up the gate node of the main-driver using output impedance of pre-driver, an additional series resistor deteriorating SerDes performance is not needed for secondary clamp.
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